AUIRS2336S
Application Information and Additional Details
Information regarding the following topics are included as subsections within this section of the datasheet.
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IGBT/MOSFET Gate Drive
Switching and Timing Relationships
Deadtime
Matched Propagation Delays
Input Logic Compatibility
Undervoltage Lockout Protection
Shoot-Through Protection
Enable Input
Fault Reporting and Programmable Fault Clear Timer
Over-Current Protection
Over-Temperature Shutdown Protection
Truth Table: Undervoltage lockout, ITRIP, and ENABLE
Advanced Input Filter
Short-Pulse / Noise Rejection
Bootstrap Power Supply Design
Separate Logic and Power Grounds
Tolerant to Negative V S Transients
PCB Layout Tips
Additional Documentation
IGBT/MOSFET Gate Drive
The AUIRS2336S HVICs are designed to drive up to six MOSFET or IGBT power devices. Figures 1 and 2 illustrate
several parameters associated with the gate drive functionality of the HVIC. The output current of the HVIC, used to
drive the gate of the power switch, is defined as I O . The voltage that drives the gate of the external power switch is
defined as V HO for the high-side power switch and V LO for the low-side power switch; this parameter is sometimes
generically called V OUT and in this case does not differentiate between the high-side or low-side output voltage.
V B
(or V CC )
HO
I O+
V B
(or V CC )
HO
(or LO)
V S
+
V HO (or V LO )
-
(or LO)
V S
I O-
(or COM)
Figure 1: HVIC sourcing current
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(or COM)
Figure 2: HVIC sinking current
? 2009 International Rectifier
相关PDF资料
AUIRS4426S IC DRIVER LOW SIDE DUAL 8SOIC
AUIRS4427STR IC DRIVER LOW SIDE DUAL 8NSOIC
AUIRS4428S IC DRIVER LOW SIDE DUAL 8SOIC
AWH50G-0202-IDC-R CONN PIN IDC 50POS W/O MT EAR
AWH50G-E232-IDC-R CONN PIN IDC 50POS W/ FLANGE
AWP08-7541-T-R CONN SOCKET IDC 10 POS W/KEY TIN
AWP14-7541-T-R CONN SOCKET IDC 14POS W/STR TIN
AWP2-08-7240-T-R CONN SOCKET IDC 8POS W/KEY GOLD
相关代理商/技术参数
AUIRS2336STR 功能描述:功率驱动器IC 3-Phase Bridge DRVR 600V 200mA 275ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS44261S 功能描述:功率驱动器IC Dual Low Side DRVR 25V 2.3A 70ns AUTO RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS44261STR 功能描述:功率驱动器IC Dual Low Side DRVR 25V 2.3A 70ns AUTO RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS4426S 功能描述:功率驱动器IC Dual Low Side DRVR 25V 2.3A 70ns AUTO RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS4426STR 功能描述:功率驱动器IC Dual Low Side DRVR 25V 2.3A 70ns AUTO RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS4427S 功能描述:功率驱动器IC AUTO GRADE DUAL 6V - 20V Low Side RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS4427STR 功能描述:功率驱动器IC AUTO GRADE DUAL 6V - 20V Low Side RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS4428S 功能描述:功率驱动器IC AUTO GRADE DUAL 6V - 20V Low Side RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube